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PD - 97172
IRF7854PBF
Applications l Primary Side Switch in Bridge or twoswitch forward topologies using 48V (10%) or 36V to 60V ETSI range inputs. l Secondary Side Synchronous Rectification Switch for 12Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
HEXFET(R) Power MOSFET
VDSS
80V
RDS(on) max
13.4m:@VGS = 10V
ID
10A
S S S G
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
Max.
80 20 10 7.9 79 2.5 0.02 11 -55 to + 150
Units
V A
c
W W/C V/ns C
h
Storage Temperature Range
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount)
Typ.
Max.
20 50
Units
C/W
ei
--- ---
Notes through are on page 8
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01/05/06
IRF7854PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
80 --- --- 3.0 --- --- --- --- --- 0.095 11 --- --- --- --- --- --- --- 13.4 4.9 20 250 100 -100 nA V m V A
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 10A VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
V/C Reference to 25C, ID = 1mA VDS = VGS, ID = 100A
f
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Parameter Single Pulse Avalanche Energyd Avalanche CurrentA
Min. Typ. Max. Units
12 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 27 7.7 8.7 9.4 8.5 15 8.6 1620 350 86 1730 230 410 --- 41 --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- pF ns nC S ID = 6.0A VDS = 40V VGS = 10V VDD = 40V ID = 6.0A RG = 6.2 VGS = 10V VGS = 0V VDS = 25V
Conditions
VDS = 25V, ID = 6.0A
f f
= 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 64V, = 1.0MHz VGS = 0V, VDS = 0V to 64V Max. 110 6.0
g
Avalanche Characteristics
EAS IAR Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 43 76 2.3 A 79 1.3 65 110 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 6.0A, VGS = 0V TJ = 25C, IF = 6.0A, VDD = 25V di/dt = 100A/s
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7854PBF
100
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
100
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
BOTTOM
1
BOTTOM
0.1
1
5.0V
0.01
5.0V
60s PULSE WIDTH
Tj = 25C 0.001 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 150C 10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 10A VGS = 10V
10
T J = 150C
1.5
T J = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 4 5 6 7 8
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF7854PBF
100000
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd
12.0 ID= 6.0A
VGS, Gate-to-Source Voltage (V)
10.0 8.0 6.0 4.0 2.0 0.0
10000
C, Capacitance (pF)
VDS= 64V VDS= 40V VDS= 16V
1000
Ciss Coss Crss
100
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
T J = 150C 10 T J = 25C 1
100
10
100sec
1
10msec
0.1
T A = 25C
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
Tj = 150C Single Pulse 0.01 0 1 10
1msec
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7854PBF
10
VDS
8
ID, Drain Current (A)
RD
VGS RG
D.U.T.
+
6
-VDD
10V
4
Pulse Width 1 s Duty Factor 0.1 %
2
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150 T A , Ambient Temperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100 10
Thermal Response ( Z thJA )
1 0.1 0.01 0.001
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
R1 R1 2
R2 R2
R3 R3 A 3
Ri (C/W) 4.329 30.099 15.590
(sec)
0.003565 1.1249 34.5
1
2
3
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000
0.0001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7854PBF
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
25 T J = 125C 20
40 ID = 6.0A 35 30 25 20 15 10 4 6 8 10 12 14 16 T J = 125C
15 T J = 25C 10 Vgs = 10V 5 0 10 20 30 40 50 60 70 80 90 ID, Drain Current (A)
T J = 25C
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
L
0
DUT 1K
VCC
VGS
QGS VG
QG QGD
450
EAS , Single Pulse Avalanche Energy (mJ)
400 350 300 250 200 150 100 50 0 25 50 75
Charge
ID TOP 0.61A 0.75A BOTTOM 6.0A
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
15V
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
A
I AS
tp
0.01
100
125
150
Starting T J , Junction Temperature (C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy vs. Drain Current
6
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IRF7854PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
(;$03/( 7+,6 ,6 $1 ,5) 026)(7 '$7( &2'( <:: 3 '(6,*1$7(6 /($')5(( 352'8&7 237,21$/ < /$67 ',*,7 2) 7+( <($5 :: :((. $ $66(0%/< 6,7( &2'( /27 &2'( 3$57 180%(5
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IRF7854PBF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 6.0mH, RG = 25, IAS = 6.0A. When mounted on 1 inch square copper board, t 10 sec.
Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time ISD 6.0A, di/dt 350A/s, VDD V(BR)DSS, TJ 150C. R is measured at TJ of approximately 90C.
as Coss while VDS is rising from 0 to 80% VDSS.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/06
8
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